| EPSRC Reference: |
GR/R46335/01 |
| Title: |
Evolution of ion implantation damage in SI |
| Principal Investigator: |
Jones, Professor R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 October 2001 |
Ends: |
30 September 2004 |
Value (£): |
146,694
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Processing |
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| EPSRC Industrial Sector Classifications: |
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| Related Grants: |
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Summary on Grant Application Form |
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First principles theoretical calculations will be performed to identify stable interstitial clusters and examine the low energy pathways Involved in their evolution into extended defects in Ion implanted SI.Particular attention will be made to determine observable quantities of the clusters and extended defects. In particular, their electrical levels and optical transitions as well as vibrational properties will be investigated. The calculations will be linked with on-going experimental PL, DLTS and TEM studies in an intemationall consortium. The effect of impurities like boron, carbon and oxygen on the stability of the dusters will be considered.The structures of extended defects such as the (113) defect and Frank partials will be descried. Particular attention will be focussed on means by which transient enhanced diffusion is suppressed.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |