EPSRC Reference: |
GR/R70842/01 |
Title: |
New Forms of Device Integration |
Principal Investigator: |
Kelly, Emeritus Professor MJ |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Engineering |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 October 2002 |
Ends: |
28 February 2005 |
Value (£): |
152,907
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
VLSI Design |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
In previous work we have found that it is possible to implant through a sensitive device structure (a resonant tunnel diode) which is near the surface, destroying the diode properties in the process, but to recover the near-pristine characteristics upon annealling. We want to extend this concept, first to replicate the results for a near-surface HEMT, and then to demonstrate novel forms of vertical integration of devices to create 'two-and-a-half dimensional circuits. Here we want to show that the integrated structures can work, and we want to establish optimum geometries by modelling. In addition we want to establish some of the parameter boundaries (for the implant and anneal profiles and the device characteristics to which this concept of vertical integration would apply. Our circuit examples would include an inregrated mixer with local oscillator and either a detector/varactor or a HEMT/p-i-n diode combination.
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Key Findings |
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Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |