EPSRC Reference: |
GR/R93872/01 |
Title: |
Dilute III-V Nitrides: A Feasibility Study of Surface and Interface Electronic Structure |
Principal Investigator: |
McConville, Professor CF |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Warwick |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 April 2002 |
Ends: |
31 March 2003 |
Value (£): |
44,120
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EPSRC Research Topic Classifications: |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
This short feasibility study will establish the possibilities for fundamental surface science in a key area of photonic materials. The objective is to evaluate the potential of electronic structure measurements of dilute III-V nitride surfaces, specifically epitaxially grown lnSbN alloys, with N content between 0.2% and 10%. High resolution electron energy loss spectroscopy (HREELS) will be used to measure the effects of temperature and differing N content (and the resultant changes in band-gap) on the band bending and carrier mobility. Additionally, LEED, AFM and XPS will be used to correlate the electronic properties with the structural and chemical nature of the surface. The surface space-charge properties of thin InSbN films produced by low energy nitrogen ion bombardment of InSb will also be studied using HREELS and compared with the bulk lnSbN alloys. Finally, a compositionally graded InSbN alloy layer will be fabricated and evaluated, in order to reduce the Schottky barrier height at the surface, and produce an Ohmic contact with InSb.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.warwick.ac.uk |