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Details of Grant 

EPSRC Reference: GR/S05779/01
Title: Quantum Light Emitting Diode for Secure Comms (Q-LED)
Principal Investigator: Ritchie, Professor D
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Cambridge
Scheme: LINK
Starts: 22 April 2003 Ends: 21 August 2006 Value (£): 248,663
EPSRC Research Topic Classifications:
Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
The aim of this work will be to fabricate single-photon sources using emission from self-assembled InAs or InGaAs quantum dots embedded in GaAs pin diode structures grown by molecular beam epitaxy (MBE). The performance and manufacturability of these structures will be enhanced by positioning the self-assembled dots at specific lateral locations in the device structure.This will be achieved by growth on epilayers previosly patterned by two techniques (1) using an atomic force microscope to generate patterns of oxid on a GaAs surface (2) Electron beam lithography followed by etching. These wafers will then be decontaminated by insitu hydrogen radical cleaning and self-assembled InAs quantum dots will be deposited on these surfaces. A variety of different surface patterns will be used to locate the dots in specific places on the wafer surface. In addition the dot growth conditions will be varied for optimal optical performance. Finally these techniques will I used to fabricate electroluminescent device structures.
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Organisation Website: http://www.cam.ac.uk