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Details of Grant 

EPSRC Reference: GR/S09883/01
Title: Vertical Metal Oxide Tunnel Transistors
Principal Investigator: de Groot, Professor C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electronics and Computer Science
Organisation: University of Southampton
Scheme: Standard Research (Pre-FEC)
Starts: 01 August 2003 Ends: 31 January 2006 Value (£): 103,282
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
In 1996 a novel nanometer sized field effect transistor was proposed. In this metal oxide tunneling transistor (MOTT) the gate modulates the tunnel probability through an insulating barrier in between a metal source and metal drain. Experimental realisation of these devices has been shown recently and excellent operation has been achieved at 90K. Room temperature operation was, however, extremely poor due to thermal leakage currents. Recent developments in high-k dielectric gate-oxides have given rise to a new opportunity to improve dramatically on the design: by fabricating a MOTT in which the tunnel oxide is grown in the plane of the wafer increased control of the tunnel barrier oxidation and hence a strongly reduced leakage current can be achieved. Using the knowledge of the investigator in the area of tunnel junctions and growth methods, and the expertise of the university of Southampton in fabrication of advanced field effect transistors, the current proposal is directed to fabricate a room temperature operating prototype MOTT based on a vertical design structure. The successfull vertical MOTT will have comparable subthreshold and output characteristics as a MOSFET while benefitting from further size reduction, lower fabrication cost, higher speed, radiation hardness, and flexible substrates.
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Organisation Website: http://www.soton.ac.uk