EPSRC Reference: |
GR/S10636/01 |
Title: |
Platform :Advanced Materials and Device Technology in Dilute and Wide Bandgap III-Nitride Semiconductors |
Principal Investigator: |
Dawson, Professor M |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Inst of Photonics |
Organisation: |
University of Strathclyde |
Scheme: |
Platform Grants (Pre-FEC) |
Starts: |
01 April 2003 |
Ends: |
31 March 2007 |
Value (£): |
444,370
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Synthesis & Growth |
Optical Devices & Subsystems |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
This proposal is based on a broad and unified vision of nitrogen-containing III-V semiconductors enabling a family of advanced surface-normal lightemitting and modulator devices. In particular, it envisions these devices being based on both dilute and wide bandgap III-N semiconductors, and their pull-through and application in emerging areas of biophotonics, microdisplays, sensing and telecommunications. The devices include InGaN microLEDs, InGaN microcavities and InGaN VECSELs for violet-blue-green wavelengths, and GaInNAs-based VCSOAs, SESAMs, and VECSELs for the 1 1.5um range. The team is uniquely placed to deliver on this vision. Platform Grant support will be used to(i) Develop these subjects on the broad front required, maintaing a balance between the dilute and wide-bandgap III-N interests and the flow of information and cross-fertilisation between these areas.(ii) Capitalise on and further develop the expertise of key PDRA's currently employed on fixed-term contracts (iii) Strengthen the interaction with target groups of international standing
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.strath.ac.uk |