EPSRC Reference: |
GR/S27542/01 |
Title: |
Silicon-Based Infra-Red Lasers using Si/SiGe Quantum Cascades |
Principal Investigator: |
Cullis, Professor AG |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic and Electrical Engineering |
Organisation: |
University of Sheffield |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 January 2004 |
Ends: |
31 December 2006 |
Value (£): |
95,503
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EPSRC Research Topic Classifications: |
Materials Synthesis & Growth |
Optical Devices & Subsystems |
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EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Quantum cascade lasers (QCLs) based on III-V heterostructures have proved enormously successful as solid-state radiation sources covering a range of infrared wavelengths (from 3 to 24 microns). A QCL operating in the THz band (4.4THz, with a power output of several mW) has also bi demonstrated. QCL operation does not involve interband recombination, and therefore the concept is readily transferable to the Si/SIGe material system. A Si/SiGe QCL therefore represents one of the most promising technological routes to realisation of a silicon-based laser. Recent work members of this consortium has shown that high quality Si/SiGe quantum cascade heterostructures (of up to 100 periods to date) can be grown c virtual substrates. This project incorporates research expertise in silicon-on-silicide-on-insulator (SSOI) technology to develop silicon-based lase structures and hence realise both edge and surface-emitting Si/SIGe quantum cascade lasers.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.shef.ac.uk |