| EPSRC Reference: |
GR/S42859/01 |
| Title: |
Exploratory proposal to grow and characterise gallium nitride on silicon |
| Principal Investigator: |
Humphreys, Professor Sir C |
| Other Investigators: |
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| Department: |
Materials Science & Metallurgy |
| Organisation: |
University of Cambridge |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 2003 |
Ends: |
30 April 2003 |
Value (£): |
53,664
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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The main substrates used throughout the world for the growth of GaN are sapphire and silicon carbide. All of our growth at Cambridge so far has been on sapphire substrates. This proposal is to initiate at Cambridge the growth of high quality GaN on Si, both using an AIN buffer layer and also innovatively to investigate the use of oxide intermediate layers. We will characterise the samples grown using a wide range of techniques, including electron microscopy, AFM, high resolution x-ray diffraction, photo-luminescence and Hall measurements. If high quality GaN can be grown on Si this will be a major advance in the growth of GaN.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.cam.ac.uk |