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Details of Grant 

EPSRC Reference: GR/S56030/01
Title: Surface & Interface Electronic Structure of Arsenic-Based Dilute III-V Nitrides
Principal Investigator: McConville, Professor CF
Other Investigators:
Researcher Co-Investigators:
Project Partners:
University of Sheffield
Department: Physics
Organisation: University of Warwick
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 2003 Ends: 31 August 2005 Value (£): 99,979
EPSRC Research Topic Classifications:
Condensed Matter Physics Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal follows a highly successful feasibility study (GR/R93872/01) in which we established the potential of fundamental surface physics particularly the potential of near-surface electronic structure measurements, to impact the relatively new area of dilute 1114 nitrides. The proposal seeks to extend the experimental and theoretical methodology we have developed whilst studying InNSb to the investigation of the electronic properties of GalnNAs and InNAs alloys for application in long wavelength optoelectronic devices (1.3-1.55 microns and 8-12 microns respectively). High re; electron energy loss spectroscopy (HREELS) and Hall measurements will be used to measure the effects of temperature and differing alloy composition, on the resultant bulk band structure and surface space-charge layers. Calculations of the bulk band structure using both the band crossing model and the modified k.p approximation will be performed in order to interpret the experimental results. Semi-classical dielectric theory simulations of the HREEL spectra and charge profile calculations will be used to quantify the surface space-charge properties. Changes in the bonding configurations in the III-N-As epilayers will be monitored using x-ray photoelectron spectroscopy, enabling both the blue shift in the ph( luminescence signal after annealing in GalnNAs and hydrogen passivation of nitrogen to be explained microscopically. InNAs thin films produced energy nitrogen ion bombardment and annealing of InAs will also be studied using HREELS, XPS, XRD and PL and compared with the epitaxial alloys
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Organisation Website: http://www.warwick.ac.uk