EPSRC Reference: |
GR/S71835/01 |
Title: |
Characterisation of a new class of thin film transistors |
Principal Investigator: |
Shannon, Professor J |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Sch of Electronics & Physical Sciences |
Organisation: |
University of Surrey |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
09 August 2004 |
Ends: |
08 January 2008 |
Value (£): |
258,144
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EPSRC Research Topic Classifications: |
Displays |
Electronic Devices & Subsys. |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
We propose to assess the properties of a new class of thin film transistor which we believe will make a major impact in electronic systems and circuits. The transistor named the source gated transistor has a number of advantages compared with its nearest relative, the field effect transistor. Transistors will be fabricated in hydrogenated amorphous silicon and assessed in the context of active matrix addressing of current driven emissive displays. We propose to examine both analogue and digital behaviour and the potential of the source gated transistor at high frequencies. The main objective is to obtain a good understanding of the behaviour of the source gated transistor and its benefits not only for active matrix addressing but for electronics as a whole.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.surrey.ac.uk |