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Details of Grant 

EPSRC Reference: GR/T09804/01
Title: Control of Quantum Dot Growth by Sub-Surface Dislocations.
Principal Investigator: Cockayne, Professor D
Other Investigators:
Nguyen-Manh, Dr D
Researcher Co-Investigators:
Project Partners:
IBM
Department: Materials
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 2004 Ends: 30 April 2008 Value (£): 208,881
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The quantum dots (QDs) investigated in this work are nano-sized semiconductor islands which, due to their size, exhibit novel electronic properties. They take microelectronics to the next stage of nanoelectronics. QDs typically involve the growth of small islands of one semiconductor on another semiconductor acting as a substrate. For progress in this field, it is necessary to develop methods for the controlled growth of QDs, preferably in arrays. This project aims to study the effectiveness of dislocations embedded in crystalline substrates as nucleation sources for the growth of QDs, and specifically their effectiveness in controlling the composition and sizes of the QDs. This will be done in a combined theoretical and experimental study in a collaboration between the University of Oxford, Culham Science Centre (UKAEA), and IBM (Yorktown Heights, USA). These three laboratories bring together a unique combination of materials characterisation, modelling and in-situ observation during QD growth.
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Organisation Website: http://www.ox.ac.uk