EPSRC Reference: |
GR/T09804/01 |
Title: |
Control of Quantum Dot Growth by Sub-Surface Dislocations. |
Principal Investigator: |
Cockayne, Professor D |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials |
Organisation: |
University of Oxford |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 November 2004 |
Ends: |
30 April 2008 |
Value (£): |
208,881
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The quantum dots (QDs) investigated in this work are nano-sized semiconductor islands which, due to their size, exhibit novel electronic properties. They take microelectronics to the next stage of nanoelectronics. QDs typically involve the growth of small islands of one semiconductor on another semiconductor acting as a substrate. For progress in this field, it is necessary to develop methods for the controlled growth of QDs, preferably in arrays. This project aims to study the effectiveness of dislocations embedded in crystalline substrates as nucleation sources for the growth of QDs, and specifically their effectiveness in controlling the composition and sizes of the QDs. This will be done in a combined theoretical and experimental study in a collaboration between the University of Oxford, Culham Science Centre (UKAEA), and IBM (Yorktown Heights, USA). These three laboratories bring together a unique combination of materials characterisation, modelling and in-situ observation during QD growth.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.ox.ac.uk |