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| Name: |
Professor S Novikov |
| Organisation: |
University of Nottingham |
| Department: |
Sch of Physics & Astronomy |
| Current EPSRC-Supported Research
Topics: |
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Condensed Matter Physics
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Magnetism/Magnetic Phenomena
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Materials Characterisation
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Materials Synthesis & Growth
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Surfaces & Interfaces
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| Current EPSRC Support |
| EP/T019018/1 | EPI2SEM: EPItaxial growth and in-situ analysis of 2-dimensional SEMiconductors | (C) |
| EP/P019080/1 | Strain-engineered graphene: growth, modification and electronic properties | (C) |
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| Previous EPSRC Support |
| EP/M013294/1 | UK Quantum Technology Hub for Sensors and Metrology | (C) |
| EP/L013908/1 | Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures. | (P) |
| EP/K008323/1 | Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. | (P) |
| EP/K027808/1 | Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics | (C) |
| EP/K014471/1 | Silicon Compatible GaN Power Electronics | (C) |
| EP/K040243/1 | A Plasma-assisted Molecular Beam Epitaxy System for Engineering of Graphene/Boron Nitride Low Dimensional Structures | (P) |
| EP/J015792/1 | Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC. | (C) |
| EP/I035501/1 | Solar cells based on InGaN nanostructures | (C) |
| EP/I004203/1 | Amorphous and crystalline GaNAs alloys for solar energy conversion devices | (P) |
| EP/G030634/1 | Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals | (P) |
| EP/G035202/1 | Terahertz acoustic laser (saser) devices: fabrication and characterisation | (C) |
| EP/G046867/1 | Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy | (P) |
| TS/G001448/1 | Green Laser Diodes | (C) |
| EP/G007160/1 | Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting | (P) |
| EP/F019076/1 | Defect reduction in GaN using the in-situ growth of transition metal nitride layers | (C) |
| EP/D051487/1 | Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy | (R) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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