| EP/R00448X/1 | Underpinning Power Electronics switch optimisation Theme | (C) |
| EP/L025450/1 | eFutures - maximizing the impact of electronics research in the UK | (P) |
| NS/A000026/1 | Controlling Abnormal Network Dynamics with Optogenetics (CANDO) | (C) |
| EP/K028421/1 | Multi-electrode electromyography: developing electrical cross-sectional imaging of skeletal muscle. | (C) |
| EP/L007010/1 | Underpinning Power Electronics 2012: Devices Theme | (C) |
| EP/J010944/1 | Atomic Layer Interface Engineering for Nanoelectronics (ALIEN): Contacts | (P) |
| EP/I038357/1 | eFuturesXD - crossing the boundaries | (P) |
| EP/H048634/1 | eFutures: university research in electronics | (P) |
| EP/H023666/1 | Ferroelectrics for Nanoelectronics (FERN) | (P) |
| EP/H024476/1 | Nano Lab Cross Disciplinary Feasibility Account | (P) |
| EP/D068827/1 | Technologies for SiC electronics and sensors in extreme environments | (C) |
| EP/D036682/1 | Platform: Strained Si / SiGe: Materials, Technology and Design | (P) |
| GR/T18950/01 | Strained Si/SiGe Virtual Substrate Heterojunction Bipolar Transistor | (P) |
| GR/T06339/01 | Integration of Microelectromechanical Systems (MEMS) with Electronics in Silicon Carbide for Harsh Environments | (C) |
| GR/S97606/01 | X-ray Propagation in Carbon Nanotubes: Proof of Concept | (P) |
| GR/T07879/01 | NETWORK:Silicon Research and Exploitation For the Nanotechnology Era | (P) |
| GR/S80028/01 | Power Electronics, Drives and Machines | (C) |
| GR/S20420/01 | Advancing Silicon Carbide Electronics Technology (ASCENT) | (C) |
| GR/R99966/01 | TCAD study of SiGe virtual substrate Heterojunction Bipolar Transistor | (P) |
| GR/R96385/01 | Platform: Silicon Carbide Electronic Systems | (C) |
| GR/R99737/01 | Engineering Doctorate Centre: POWER ELECTRONICS,DRIVES and MACHINES | (C) |
| GR/N65653/01 | SIGE FOR MOS TECHNOLOGIES | (P) |
| GR/R37708/01 | Electronics for extreme environments network (E3NET) | (C) |
| GR/N32945/01 | ULSI INTERCONNECTS: PROCESS MODELLING AND TEST FOR REL IABILITY AGAINST ELECTROMIGRATION AND STRESS-PROMOTES | (P) |
| GR/M99835/01 | NETWORK: SETNET -- SEMICONDUCTOR TEST NETWORK | (C) |
| GR/L62320/01 | SILICON CARBIDE ELECTRONICS FOR HIGH POWER HIGH TEMPERATURE APPLICATIONS (SCEPTRE) | (C) |
| GR/L53731/01 | SIGE FOR MOS TECHNOLOGIES | (P) |
| GR/K50719/01 | SYNTHESIS OF NOVEL POLYMERS CONTAINING AMINE OXIDES TO CONTROL MACROMOLECULAR CONFORMATION | (P) |
| GR/K13837/01 | RELIABILITY AND DESIGN RULES FOR DEEP SUBMICRON AND POWER INTEGRATED CIRCUIT INTERCONNECT TECHNOLOGY | (P) |
| GR/J81167/01 | CHIRAL AMINE OXIDES AS POWERFUL NEW REAGENTS IN ASYMMETRIC SYNTHESIS | (P) |
| GR/K55882/01 | SIGE/SI MONOLITHIC MICROWAVE INTEGRATED CIRCUIT TECHNOLOGY | (P) |
| GR/J80474/01 | THE SYNTHESIS AND APPLICATION OF OLIGONUCLEOTIDES CONTAINING CATALYTICALLY USEFUL 2'-SUBSTITUENTS. | (C) |
| GR/J82034/01 | SIGE/SI MONOLITHIC MICROWAVE INTEGRATED CIRUIT TECHNOLOGY | (P) |
| GR/J46241/01 | HIGH SPEED VERTICAL POWER DEVICES FOR SWITCHING APPLICATIONS USING III-V SEMICONDUCTOR TECHNOLOGY | (P) |
| GR/H85335/01 | DELTA-DOPED BURIED CHANNEL MOSFET-A NEW DEVICE FOR SUBMICRON CMOS | (P) |
| GR/F69154/01 | TEACHING CO. PROGRAMME BETWEEN NOTTINGHAM . POLYTECHNIC AND W A METROLOGY | (P) |
| GR/F38594/01 | DELTA-DOPED BURIED CHANNEL MOSFET- A NEW DEVICE FOR SUB-MICRON CMOS TECHNOLOGY | (P) |