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Name: |
Dr GR Booker |
Organisation: |
University of Oxford |
Department: |
Materials |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
GR/L70011/01 | INSB QUANTUM DOTS FOR MID-INFRARED APPLICATIONS | (P) |
GR/L20610/01 | SHALLOW P - AND N - TYPE JUNCTIONS IN SUB HALF MICRON BIPOLAR TRANSISTORS | (C) |
GR/L20061/01 | INVESTIGATION OF FLUORINE FOR ULTRA-SHALLOW P- AND N- TYPE JUNCTIONS IN HALF SUB MICRON BIPOLAR TRANSISTORS | (C) |
GR/L03583/01 | TEM/HRTEM STUDIES OF ANTIMONY-BASED III-V HETEROSTRUCTURE LAYERS GROWN BY MOVPE AND MBE | (C) |
GR/J40287/01 | THE ACTION OF FLUORINE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS | (C) |
GR/J43844/01 | ACTION OF FLUORINE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS | (P) |
GR/J36822/01 | SIRM STUDIES OF SMALL PRECIPITATE PARTICLES WITHIN BULK SEMICONDUCTOR WAFERS TO DEDUCE NON-DESTRCTVTY ETC.. | (P) |
GR/J02353/01 | DEVELOPMENT AND APPLICATION OF STRAIN, ORIENTATION AND ATOMIC NUMBER SENSITIVE BSE SEM TECHNIQUES | (P) |
GR/G42839/01 | APPLICATION OF SEM CHANNELING CONTRAST IMAGING OF DEFECTS TO SEMICONDUCTORS AND FRACTURE PROBLEMS | (C) |
GR/G30386/01 | TEM SIRM AND CL STUDIES OF LEC AND VGF INDIUM PHOSPHIDE INGOT MATERIAL | (P) |
GR/G28048/01 | MOCVD OF III-V MATERIALS FOR INTEGRATION-STRUCTURAL & ANALYTICAL STUDIES USING ELECTRON MICROSCOPY | (P) |
GR/G28055/01 | MOCVD OF III-V MATERIALS FOR INTEGRATION-STRUCTURAL AND ANALYTICAL STUDIES USING ELECTRON MICROSCOPY | (P) |
GR/F52163/01 | APPLICATION OF SCANNING INFRA-RED MICROSCOPY TO PRECIPITATION PROCESSES IN GAAS,SI,& CDTE INGOT MATERIAL | (P) |
GR/F24009/01 | DISLOCATION AND POINT DEFECTED STUDIES IN SILICON DEVICE TECHNOLOGY | (P) |
GR/F35166/01 | MATERIAL PROCESSING FOR ADVANCED SOI SUBSTRATES | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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