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Name: |
Professor TE Whall |
Organisation: |
University of Warwick |
Department: |
Physics |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
GR/S21243/01 | SiGeC Heterostructures for CMOS Technology | (C) |
GR/R62519/01 | New Generation SS-MBE Growth System for Silicon System for Silicon Heterostructures. | (C) |
GR/N65691/01 | SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATIONS | (P) |
GR/L53793/01 | SIGE FOR MOS TECHNOLOGIES | (P) |
GR/L30787/01 | THERMOPOWER: A NEW TOOL FOR SEMICONDUCTOR CHARACTERISATION | (C) |
GR/K32616/01 | THE ESTABLISHMENT AND OPERATION OF A SILICON-GERMANIUM MBE GROWTH FACILITY | (C) |
GR/J49600/01 | NOVEL TRANSPORT PHENOMENA IN ADVANCED SILICON STRUCTURES | (P) |
GR/J53959/01 | INVESTIGATION OF A B ACCEPTOR STATES IN STRAINED HETEROEPITAXIAL SI AND SIGE. | (P) |
GR/H54836/01 | THE DELTA DOPED BURIED CHANNEL MOSFET | (P) |
GR/J17234/01 | THE DELTA DOPED BURIED CHANNEL MOSFET | (P) |
GR/J56813/01 | THE DELTA DOPED BURIED CHANNEL MOSFET. | (P) |
GR/H86844/01 | INVESTIGATION OF B ACCEPTOR STATES IN STRAINED HETEROEPITAXIAL SI AND SIGE | (P) |
GR/H85120/01 | SILICON QUANTUM DEVICES AND NANOSTRUCTURES | (P) |
GR/H10795/01 | LOW DIMENSIONAL PHENOMENA IN SILICON - PROPOSAL FOR FURTHER SUPPORT | (C) |
GR/G30645/01 | LOW DIMENSIONAL PHENOMENA IN SILICON - INTERIM PROPOSAL | (C) |
GR/F36941/01 | SILICON QUANTUM DEVICES AND NANOSTRUCTURES | (P) |
GR/F38587/01 | THE DELTA DOPED BURIED-CHANNEL MOSFET | (P) |
GR/E28635/01 | LOW DIMENSIONAL PHENOMENA IN SILICON | (C) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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