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| Name: |
Professor J David |
| Organisation: |
University of Sheffield |
| Department: |
Electronic and Electrical Engineering |
| Current EPSRC-Supported Research
Topics: |
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Electronic Devices & Subsys.
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Materials Characterisation
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Materials Synthesis & Growth
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Optical Devices & Subsystems
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Optoelect. Devices & Circuits
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| Current EPSRC Support |
| EP/T013001/1 | Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms | (C) |
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| Previous EPSRC Support |
| EP/N020715/1 | Realising a solid state photomultiplier and infrared detectors through bismide containing semiconductors | (C) |
| EP/K001469/1 | Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions | (C) |
| EP/J015814/1 | InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications | (C) |
| EP/K004220/1 | GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology | (C) |
| EP/H031464/1 | Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection | (C) |
| EP/E065007/1 | New high-performance avalanche photodiodes based on the unique properties of dilute nitrides | (P) |
| EP/D505712/1 | Support for the EPSRC National Centre for III-V Technologies at Sheffield | (C) |
| GR/R42450/01 | HACT devices using nitride matrials | (P) |
| GR/K27698/01 | IN (GAA1)AS & IN(GAA1)P STRAINED LAYER HETEROSTRUCTURE FOR ENHANCED OPTOELECTRONIC DEVICE APPLICATIONS | (C) |
| GR/J49549/01 | IMPACT IONISATION PROCESSES IN LOW DIMENSIONAL STRUCTURES AND DEVICES | (P) |
| GR/J52549/01 | COORDINATED X-RAY AND TEM STUDY OF STRAIN RELAXATION IN <111> ORIENTED PIEZOELECTRIC INGAAS/GAAS EPILAYERS | (C) |
| GR/H45773/01 | PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES | (C) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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