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| Name: |
Professor J Robertson |
| Organisation: |
University of Cambridge |
| Department: |
Engineering |
| Current EPSRC-Supported Research
Topics: |
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Electromagnetics
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Materials Synthesis & Growth
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| Current EPSRC Support |
| EP/P005152/1 | Integration of Novel Materials in Spintronic Devices | (P) |
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| Previous EPSRC Support |
| EP/M009297/1 | Mechanisms and Control of Resistive Switching in Dielectrics | (P) |
| EP/K016636/1 | CVD enabled Graphene Technology and Devices (GRAPHTED) | (C) |
| EP/J011592/1 | Atomic Layer Interface Engineering for Nanoelectronics (ALIEN): Contacts | (P) |
| EP/I014047/1 | High permittivity dielectrics on Ge for end of Roadmap application | (P) |
| DT/F002688/1 | Printed high voltage flexible inorganic transistors | (C) |
| GR/S97613/01 | Carbon Nanotubes for Photonic Devices | (C) |
| GR/R97054/01 | Carbon Based Electronics: A National Consortium | (C) |
| GR/R43297/01 | Fabrication of Carbon Nanotube Devices | (P) |
| GR/N28276/01 | STABILITY OF POLY-SILICON THIN FILM TRANSISTORS WITH LOW TEMPERATURE DEPOSITED SILICON DIOXIDE | (P) |
| GR/M90832/01 | LOW TEMPERATURE, STABLE AMORPHOUS SILICON FOR THIN FILM TRANSISTORS ON PLASTIC | (P) |
| GR/M67780/01 | NANOSTRUCTURED CARBON FOR FIELD EMISSION DISPLAYS | (P) |
| GR/M20808/01 | LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON FOR THIN FILM TRANSISTORS | (C) |
| GR/M04549/01 | LOW TEMPERATURE ECR DEPOSITED SILICON NITRIDE FOR THIN FILM TRANSISTORS ON PLASTIC | (C) |
| GR/L20986/01 | PREPARATION OF LOW FRICTION DIAMOND-LIKE CARBON- SILICON COATINGS | (P) |
| GR/L16774/01 | PREPARATION, CHARACTERISATION AND TRIBOLOGICAL PROPERTIES OF CARBON NITRIDE | (C) |
| GR/K70809/01 | AMORPHOUS CARBON EMITTERS FOR FIELD EMISSION DISPLAYS | (C) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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