EP/R029253/1 | Fibre Wavelength Quantum Networks (FQNet) | (C) |
EP/P000967/1 | GaAsP-GaAs nanowire quantum dots for novel quantum emitters | (P) |
EP/J012882/1 | Silicon based QD light sources and lasers | (P) |
EP/K004220/1 | GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology | (C) |
EP/G001642/1 | Optical Control of Quantum States in Semiconductor Nanostructures | (C) |
EP/E03344X/1 | Research Physicists Encouraging Outreach into Primary Schools | (C) |
EP/D015782/1 | Spectroscopy and Applications of Nitride Quantum Dots | (P) |
EP/C531779/1 | Research Physicists Supporting Primary Science | (C) |
GR/T09408/01 | Quantum Cryptography Using Quantum Dot Single Photon Emitters | (C) |
GR/S76076/01 | PROGRAMME GRANT: Control of light-matter interactions in advanced semiconductor nanostructures | (C) |
GR/S49308/01 | Long wavelength GaAs-based QD Lasers. | (P) |
GR/S09838/01 | New Polariton Phenomena in Semiconductor Microcavities | (C) |
GR/R15191/01 | Stimulates Emission and Lasing Processes In Inga(Ai)N Quantum Well Heterostructures | (C) |
GR/N20997/01 | STUDIES OF FUNDAMENTAL PHYSICAL PROCESSES IN INAS-(AL) GAAS SELF-ASSEMBLED QUANTUM DOTS | (P) |
GR/N23516/01 | GAINP/ALGAINP QUANTUM DOT LASERS | (C) |
GR/M72951/01 | ELECTROMAGNETIC PROPERTIES, BAND STRUCTURES AND LIGHT- MATTER INTERACTIONS IN SEMICONDUCTOR PHOTONIC CRYSTAL | (C) |
GR/N05178/01 | MID INFRA RED APPLICATIONS FOR SEMICONDUCTOR QUANTUM DOTS | (C) |
GR/M22529/01 | FEMTOSECOND DYNAMICS IN NOVEL ORGANIC AND INORGANIC SEMICONDUCTORS | (C) |
GR/L95489/01 | TRANSVERSE AND VERTICAL CAVITY QUANTUM DOT LASERS | (P) |
GR/L78017/01 | MAGNETO-OPTICAL STUDIES OF SINGLE SEMICONDUCTOR QUANTUM DOTS | (P) |
GR/L23178/01 | HIGH EFFICIENCY GREEN LEDS FOR LARGE AREA FULL COLOUR DISPLAYS (GLLAD) | (P) |
GR/L32187/01 | NOVEL PHENOMENA IN SEMICONDUCTOR QUANTUM MICROCAVITIES | (C) |
GR/L28821/01 | OPTO-ELECTRONIC INVESTIGATIONS OF SEMICONDUCTOR QUANTUM DOTS AND QUANTUM WIRES. | (C) |
GR/L11984/01 | OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B' | (C) |
GR/K79581/01 | WIDE BAND GAP ALGAINP: MATERIAL STUDIES AND SHORT WAVELENGTH NOVEL LIGHT EMITTERS | (P) |
GR/K79871/01 | LEVEL POPULATIONS, POPULATION INVERSION AND BALLISTIC TRANSPORT IN SEMICONDUCTORTUNNELLING STRUCTURES | (C) |
GR/J93894/01 | MOVPE GROWTH, CHARACTERIZATION, PHYSICS AND DEVICES OF GAN AND RELATED MATERIALS | (C) |
GR/J08652/01 | MOVPE GROWTH OF QUANTUM WIRE STRUCTURES ON NON-PLANER SUBSTRATES | (C) |
GR/H70270/01 | INVESTIGATIONS OF THE ELECTRONIC PROPERTIES OF GAINP, ALGAINP AND RELATED HETEROJUNCTION SYSTEMS. | (C) |
GR/H33947/01 | ANGLO-JAPANESE COLLABORATION | (C) |
GR/H45773/01 | PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES | (C) |
GR/H07108/01 | HIGH PRESSURE STUDIES OF ADVANCED ELECTRONIC MATERIALS | (C) |
GR/H08082/01 | OPTO-ELECTRONIC INVESTIGATIONS OF LOW DIMENSIONAL STRUCTURES AND DEVICES | (C) |