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Name: |
Professor MG Dowsett |
Organisation: |
University of Warwick |
Department: |
Physics |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
GR/S78919/01 | Novel Ion Sources for Application in Nanometer-Scale Surface and Interface Analysis | (P) |
GR/M52175/01 | A COMBINED ULTRA LOW ENERGY SIMS AND MEDIUM ENERGY ION SCATTERING INSTRUMENT FOR NANOMETER - SCALE ANALYSIS | (P) |
GR/M39701/01 | SIMS APPLICATIONS & TECHNIQUE DEVELOPMENT FOR NM-SCALE DEPTH RESOLUTION AND ULTRA_SHALLOW PROFILING | (P) |
GR/M37448/01 | NEW APPROACHES TO DOPING THIN FILM DIAMOND FOR THE FORMATION OF HIGH PERFORMANCE ELECTRONIC DEVICES | (P) |
GR/K71462/01 | THE DEVELOPMENT AND APPLICATION OF SECONDARY ION MASS SPECTROMETRY(SIMS)FOR NANOAREA ANALYSIS | (P) |
GR/K32715/01 | THREE DIMENSIONAL QUANTITATIVE CHARACTERIZATION OF ELECTRONIC MATERIALS FROM BULK TO DOPANT CONCENTRATION | (P) |
GR/H65177/01 | THE CHEMICAL CHARACTERIZATION OF SEMICONDUCTOR LAYERS WITH SUB-NM DEPTH RESOLUTION | (P) |
GR/H53525/01 | MATHEMATICAL & EXPERIMENTAL TECHNIQUES FOR QUANTIFICATION AT INTERFACES ( EXTN TO IED 1559) | (P) |
GR/H32759/01 | TWO DIMENSIONAL ANALYSIS OF DOPANT AND IMPURITY DISTRIBUTIONS IN SEMICONDUCTORS USING SIMS | (P) |
GR/H49856/01 | TWO DIMENSIONAL ANALYSIS OF DOPANT AND IMPURITY DISTRIBUTIONS IN SEMICONDUCTORS USING SIMS | (C) |
GR/F36613/01 | IED 1540:HIGH RESOLUTION CHARACTERIZATION OF VLSI STRUCTURES IN 1,2 & 3 DIMENSIONS | (P) |
GR/F34534/01 | IED 1559: HIGH PRECISION CHEMICALS ANALYSIS FOR FUTURE SILICON MATERIALS AND DEVICES | (P) |
GR/E40620/01 | SIMS ANALYSIS OF LOW DIMENSIONAL STRUCTURES | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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