| EP/L013908/1 | Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures. | (C) |
| EP/K008323/1 | Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. | (C) |
| EP/K027808/1 | Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics | (C) |
| EP/K014471/1 | Silicon Compatible GaN Power Electronics | (C) |
| EP/K040243/1 | A Plasma-assisted Molecular Beam Epitaxy System for Engineering of Graphene/Boron Nitride Low Dimensional Structures | (C) |
| EP/J015792/1 | Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC. | (C) |
| EP/I035501/1 | Solar cells based on InGaN nanostructures | (C) |
| EP/I004203/1 | Amorphous and crystalline GaNAs alloys for solar energy conversion devices | (C) |
| EP/H002294/1 | Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics | (C) |
| EP/G030634/1 | Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals | (C) |
| EP/G035202/1 | Terahertz acoustic laser (saser) devices: fabrication and characterisation | (C) |
| EP/G046867/1 | Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy | (C) |
| TS/G001448/1 | Green Laser Diodes | (C) |
| EP/G007160/1 | Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting | (C) |
| EP/F019076/1 | Defect reduction in GaN using the in-situ growth of transition metal nitride layers | (C) |
| EP/D051487/1 | Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy | (P) |
| EP/E000673/1 | Growth of thick and flat high quality GaN using nano-column compliant layers | (C) |
| EP/C548825/1 | Feasibility study of zinc-blende AIGaN heterojunction bipolar transistors | (C) |
| EP/C526546/1 | Probing the electronic, magnetic and structural properties of ferromagnetic semiconductors | (C) |
| GR/S81407/01 | Ferromagnetic Semiconductors: Materials Development & Spintronic Devices | (C) |
| GR/S71859/01 | Repair of Varian Gen II Molecular Beam Epitaxy System | (P) |
| GR/S23582/01 | Basic Technology: Hyperpolarised technologies for medical and materials sciences | (C) |
| GR/S25630/01 | Microstructural characterisation of III-V spintronic, photonic and electronic heterostructures | (C) |
| GR/R47851/01 | Characterisation of Surfaces, Thin Film and Nanometre Scale Structures by X-Ray Photoelectron Spectroscopy | (C) |
| GR/R47417/01 | Blue light from As-doped GaN low dimensional structures grown by molecular beam epitaxy | (P) |
| GR/R46465/01 | Group III-Nitride Heterostructures for Quantum Tunnelling Devices Grown by Molecular Beam Epitaxy | (P) |
| GR/R17652/01 | Mbe Materials For Room Temperature Spintronics | (P) |
| GR/N35700/01 | NETWORK: PHOTOVOLTAIC MATERIALS AND DEVICES | (C) |
| GR/M82295/01 | PHONON SCATTERING IN GALLIUM NITRIDE DEVICES UNDER ILLUMINATION | (C) |
| GR/M67438/01 | MBE GROWTH AND ASSESMENT OF GANAS - THE MISCIBILITY GAP, AS SURFACTANT EFFECTS AND CUBIC GAN LAYERS | (P) |
| GR/M94380/01 | GROWTH OF GROUP III NITRIDES BY MOVPE AND PA-MOVPE | (P) |
| GR/M04365/01 | PHONON SCATTERING AND HOT CARRIER ENERGY RELAXATION IN GALLIUM NITRIDE BASED ELECTRONIC DEVICES | (C) |
| GR/L94819/01 | GROWTH AND ASSESSMENT OF GAN SUBSTRATES FOR LASER DIODES AND FETS | (C) |
| GR/L77157/01 | GROWTH AND PROPERTIES OF GROUP III NITRIDES | (P) |
| GR/L35423/01 | BLUE/UV LASERS BASED ON NITRIDE SEMICONDUCTORS | (C) |
| GR/K34870/01 | MBMS AND RHEED STUDIES OF THE GROWTH OF GROUP III-NITRIDES | (P) |
| GR/J48368/01 | NOVEL STRUCTURES FOR VERTICAL CAVITY SURFACE EMITTING LASERS | (C) |
| GR/H96997/01 | PHONON STUDIES, TUNNELLING LITHOGRAPHY AND DEVELOPMENTS IN GROWTH BY THE NUMBERS SYNDICATE. | (C) |
| GR/H34586/01 | MODIFIED MBE GROWTH OF GA (ASN) ALLOY SEMICONDUCTORS | (C) |