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Name: |
Professor R Gwilliam |
Organisation: |
University of Surrey |
Department: |
ATI Electronics |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
EP/N020057/2 | Development and Application of Non-Equilibrium Doping in Amorphous Chalcogenides | (C) |
EP/N020057/1 | Development and Application of Non-Equilibrium Doping in Amorphous Chalcogenides | (C) |
EP/N015215/1 | Quantum technology capital: Multi-species single-ion implantation | (C) |
EP/N006372/1 | Manufacturing Lightweight Carbon Nanotube Electrical Cables: Increasing the Conductivity | (C) |
EP/L021129/1 | CORNERSTONE: Capability for OptoelectRoNics, mEtamateRialS, nanoTechnOlogy aNd sEnsing | (C) |
EP/I018417/1 | AMORPHOUS CHALCOGENIDE-BASED OPTOELECTRONIC PLATFORM FOR NEXT-GENERATION OPTOELECTRONIC TECHNOLOGIES | (C) |
EP/H051767/1 | Near infrared single photon detection using Ge-on-Si heterostructures | (C) |
EP/H002529/1 | Silicon emission technologies based on nanocrystals | (P) |
EP/H026622/1 | Coherent Optical and Microwave Physics for Atomic-Scale Spintronics in Silicon (COMPASSS) | (C) |
EP/C009592/1 | MeV ion nanobeams: nanotechnology for the 21st century | (C) |
EP/D032210/1 | University of Surrey Ion Beam Centre | (C) |
GR/R50097/01 | The University of Surrey Ion Beam Centre | (R) |
GR/R56624/01 | Dislocated engineering of efficient light emitting diodes in silicon | (C) |
GR/N09862/01 | PRECISION ION IMPLANTED SEMICONDUCTOR DEVICES | (C) |
GR/N32969/01 | FUTURE TECHNOLOGIES FOR THE ELECTRICAL ISOLATION OF III-V SEMICONDUCTOR DEVICES | (C) |
GR/H74742/01 | FABRICATION OF SEMICONDUCTING BFESI2/SI HETEROSTRUCTURES BY ION BEAM SYNTHESIS | (C) |
GR/G12924/01 | STUDIES OF THE STRUCTURAL ENVIRONMENT AROUND ION IMPLANTED DOPANTS IN GAAS USING X-RAY TECHNIQUES | (C) |
GR/G12948/01 | ION BEAM SYNTHESIS OF SILICIDES FOR DEVICES APPLICATIONS | (C) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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