EP/N015878/1 | Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates | (P) |
EP/K014471/1 | Silicon Compatible GaN Power Electronics | (C) |
NS/A000013/1 | EPSRC National Centre for III-V Technologies | (P) |
EP/E05644X/1 | InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission | (P) |
EP/D505712/1 | Support for the EPSRC National Centre for III-V Technologies at Sheffield | (P) |
GR/S85733/01 | Basic Technology: M-I3 - Multidimensional Integrated Intelligent Imaging | (C) |
GR/R65534/01 | Support for the EPSRC Central Facility for III-V Materials at Sheffield | (P) |
GR/R65626/01 | Focused Ion Beam Machining and Deposition Applications to Functional and Structural Materials Research | (R) |
GR/R34035/01 | InP Travelling-Wave HPTs for Ultra High Frequency Photonic Systems | (P) |
GR/N23516/01 | GAINP/ALGAINP QUANTUM DOT LASERS | (P) |
GR/M11509/01 | SUPPORT FOR THE EPSRC CENTRAL FACILITY FOR 111-V MATERIALS AT SHEFFIELD | (C) |
GR/L28821/01 | OPTO-ELECTRONIC INVESTIGATIONS OF SEMICONDUCTOR QUANTUM DOTS AND QUANTUM WIRES. | (C) |
GR/L11984/01 | OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B' | (C) |
GR/K79581/01 | WIDE BAND GAP ALGAINP: MATERIAL STUDIES AND SHORT WAVELENGTH NOVEL LIGHT EMITTERS | (C) |
GR/K58883/01 | INGAALP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH POWER AND HIGH FREQUENCY APPLICATIONS | (P) |
GR/K64105/01 | SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III - V SEMICONDUCTORS | (C) |
GR/J93894/01 | MOVPE GROWTH, CHARACTERIZATION, PHYSICS AND DEVICES OF GAN AND RELATED MATERIALS | (C) |
GR/J21699/01 | SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III-V SEMICONDUCTORS | (C) |
GR/J08652/01 | MOVPE GROWTH OF QUANTUM WIRE STRUCTURES ON NON-PLANER SUBSTRATES | (C) |
GR/H61896/01 | HOT ELECTRON TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR TRANSISTORS | (P) |
GR/H70270/01 | INVESTIGATIONS OF THE ELECTRONIC PROPERTIES OF GAINP, ALGAINP AND RELATED HETEROJUNCTION SYSTEMS. | (C) |
GR/H45773/01 | PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES | (C) |
GR/H08082/01 | OPTO-ELECTRONIC INVESTIGATIONS OF LOW DIMENSIONAL STRUCTURES AND DEVICES | (C) |
GR/G59356/01 | SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III-V SEMICONDUCTORS | (C) |
GR/G27065/01 | EXTENDED SUPPORT OF THE SHEFFIELD CENTRALFACILITY FOR III-V SEMICONDUCTORS | (C) |
GR/F30284/01 | NOVEL HIGH SPEED INTEGRATED INJECTION LOGIC IN INP/INGAAS | (P) |
GR/F42669/01 | CAPITAL ITEMS REQUIRED FOR SHEFFIELD CENTRAL FACILITY | (C) |
GR/E41177/01 | SUPPORT AND DEVELOPMENT OF THE SHEFFIELD III-V CENTRAL FACILITY | (C) |