Details of Grant 

EPSRC Reference:	EP/D003407/1
Title:	Spectroscopy and Applications of Nitride Quantum Dots
Principal Investigator:	Halsall, Professor MP
Other Investigators:	Bangert, Professor U
Researcher Co-Investigators:
Project Partners:
Department:	Electrical and Electronic Engineering
Organisation:	University of Manchester, The
Scheme:	Standard Research (Pre-FEC)
Starts:	01 July 2006	Ends:	31 December 2009	Value (£):	133,132
EPSRC Research Topic Classifications:	Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:	EP/D015782/1
Panel History:	Panel Date Panel Name Outcome 14 Jul 2005 Joint Photonics Prioritisation Panel (Technolgy) Deferred
Summary on Grant Application Form
InGaN is the material used in the manufacture of bright blue and white light emitting diodes and lasers, in the future these devices will replace normal incandescent bulbs in many applications, saving electricity and, in the case of DVD players, increasing storage capacity. They are made by chemically depositing very thin films of InGaN on to GaN. When a current flows in the InGaN layers electrons are confined within the layer and emit light. The authors of this proposal intend to confine the electrons not only in the InGaN layer but into very small regions of that layer by means of nanometer scale clumps of material known as quantum dots. By studying the way in which these dots form, the way in which the electrons are confined and the way in which they emit light they intend to improve the efficiency of emission from existing devices and thus realise the potential improvements to society listed above.
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Organisation Website:	http://www.man.ac.uk