| EPSRC Reference: |
GR/J14585/01 |
| Title: |
CONTROL OF DEFECT AND DOPANT DISTRIBUTIONS IN ION IMPLANTED SIGE HBT STRUCTURES |
| Principal Investigator: |
Hemment, Professor P |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Sch of Electronics & Physical Sciences |
| Organisation: |
University of Surrey |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 July 1993 |
Ends: |
30 June 1996 |
Value (£): |
178,912
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Summary on Grant Application Form |
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To enhance the manufacturability of strained layer Si/SiGe HBTs by establishing optimum processing conditions by investigating:(i) dopant incorporation in Si/SiGe heterostructures by ion implantation.(ii) quantifying the thermal stability of strained SiGe layers in the presence of lattice defects.(iii) evaluating SiGe heterostructures synthesised by ion implantation as an alternative to CVD or MBE layer deposition.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.surrey.ac.uk |