EPSRC Reference: |
GR/J46241/01 |
Title: |
HIGH SPEED VERTICAL POWER DEVICES FOR SWITCHING APPLICATIONS USING III-V SEMICONDUCTOR TECHNOLOGY |
Principal Investigator: |
O'Neill, Professor A |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electrical, Electronic & Computer Eng |
Organisation: |
Newcastle University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
08 March 1994 |
Ends: |
07 December 1997 |
Value (£): |
132,167
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The programme aims to demonstrate a novel, vertical power FET with integrated intelligent gate drive circuitry based on gallium arsenide technology. Theoretical benefits include an 8.5 times increase in maximum operating frequency and reduced on-state losses. Projected voltage and current ratings of 800V and 10A respectively will allow realistic comparison with silicon devices operating in off-line applications at power levels up to 1kW. A first generation structure will demonstrate the power device and logic level devices on a single die using SERC facilities at Surrey. Subsequent structures will incorporate further logic level devices to realise the integrated, intelligent drivers. Two such FETs will be employed in a resonant half-bridge circuit operating in an off-line environment at frequencies up to 30mhz. CAE techniques will be used extensively as part of the design and analysis procedure and a theoretical study of other vertical gallium arsenide structures, together with a study of their suitability for power applications, will be undertaken.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.ncl.ac.uk |