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Details of Grant 

EPSRC Reference: GR/J46241/01
Title: HIGH SPEED VERTICAL POWER DEVICES FOR SWITCHING APPLICATIONS USING III-V SEMICONDUCTOR TECHNOLOGY
Principal Investigator: O'Neill, Professor A
Other Investigators:
Johnson, Dr C Johnson, Professor CM
Researcher Co-Investigators:
Project Partners:
Department: Electrical, Electronic & Computer Eng
Organisation: Newcastle University
Scheme: Standard Research (Pre-FEC)
Starts: 08 March 1994 Ends: 07 December 1997 Value (£): 132,167
EPSRC Research Topic Classifications:
Power Electronics
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The programme aims to demonstrate a novel, vertical power FET with integrated intelligent gate drive circuitry based on gallium arsenide technology. Theoretical benefits include an 8.5 times increase in maximum operating frequency and reduced on-state losses. Projected voltage and current ratings of 800V and 10A respectively will allow realistic comparison with silicon devices operating in off-line applications at power levels up to 1kW. A first generation structure will demonstrate the power device and logic level devices on a single die using SERC facilities at Surrey. Subsequent structures will incorporate further logic level devices to realise the integrated, intelligent drivers. Two such FETs will be employed in a resonant half-bridge circuit operating in an off-line environment at frequencies up to 30mhz. CAE techniques will be used extensively as part of the design and analysis procedure and a theoretical study of other vertical gallium arsenide structures, together with a study of their suitability for power applications, will be undertaken.
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Organisation Website: http://www.ncl.ac.uk