| EPSRC Reference: |
GR/J49600/01 |
| Title: |
NOVEL TRANSPORT PHENOMENA IN ADVANCED SILICON STRUCTURES |
| Principal Investigator: |
Whall, Professor TE |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Warwick |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 November 1993 |
Ends: |
31 October 1996 |
Value (£): |
139,144
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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| EPSRC Industrial Sector Classifications: |
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| Panel History: |
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Summary on Grant Application Form |
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As stated on the original collaborative application form for the research grant, these are:(i) to understand electron/hole transport in single, coupled and interacting 2D electron/hole gases in silicon structures and with a further reduction in dimension produced by electron-beam lithography;(ii) to establish design criteria for devices based on the above physics; and(iii) to supply Si-Ge material grown by MBE for the programme. Progress: At Warwick, two major projects are underway in connection with this grant: (1) First of all ,we want to make backgated 2DHG structures, the purpose of which is to probe the nature of conduction (carrier scattering) mechanisms in SiGe channel devices, by using the variation in resistance with carrier density as the diagnostic probe. The status of this project is that mask and process design is complete, as is the mask fabrication: as soon as the first batch of MBE wafers has been grown the Warwick post-doc. will go to Southampton and do the wafer processing. (2) The second project underway on this grant is our first effort at fabricating devices comprising two closely-spaced 2D charge gases. We have proposed to our collaborators a novel device in which a buried SiGe channel 2DHG is made by remote doping, together with a surface oxide/gate structure to define a 2D electron gas (inversion layer) within a few tens of nm of the 2DHG. It is desired to make independent ohmic contacts to the electron and hole gases, thereby allowing the study of transport in each layer as influenced by the other one. We believe that weve devised a very reliable method for doing this: at a meeting of project partners in the near future it is hoped to finalise details of this, after which mask design will be undertaken. At the same time, it is necessary to develop reliable growth methods for the inverted-doped SiGe channel 2DHG to be used in this device: MBE layers for this study are about to be grown (our collaborators in Cambridge Physics need to know the outcome of these experiments).SiGe material supply to project partners:a/Cambridge Engineering:(i) two boron d-layers in Si, (oxidation at Liverpool first of all).(ii) recent (2/95) request for 2 SiGe layers (again, to be oxidised at Liverpool).b/ CU Physics:(i) 3 SiGe layers for etch rate experiments(ii) one B d-layer in SiGe for initial studies of patterned ion-beam damage. More wafers to follow, after conclusions of initial experiments.Request for dual-doped SiGe channel hole gases - this is linked in with Warwick project (2) above.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.warwick.ac.uk |