Details of Grant 

EPSRC Reference:	GR/J52549/01
Title:	COORDINATED X-RAY AND TEM STUDY OF STRAIN RELAXATION IN <111> ORIENTED PIEZOELECTRIC INGAAS/GAAS EPILAYERS
Principal Investigator:	Rees, Professor GJ
Other Investigators:	David, Professor J
Researcher Co-Investigators:
Project Partners:
Department:	Electronic and Electrical Engineering
Organisation:	University of Sheffield
Scheme:	Standard Research (Pre-FEC)
Starts:	06 January 1994	Ends:	05 January 1996	Value (£):	17,382
EPSRC Research Topic Classifications:	Materials Characterisation
EPSRC Industrial Sector Classifications:
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Panel History:
Summary on Grant Application Form
The techniques of x-section TEM, x-ray diffraction and optical and electrical assessment will be combined to investigate the mechanisms of strain relaxation in InGaAs layers grown by pseudomorphic, mismatched epitaxy on the B face of GaAs, RHeED will be used to investigate the regime of good 2D growth and the study will establish the limits of strain and strained layer thickness for structural integrity and stability. Our studies will complement those on <001> oriented layers where we expect mechanisms of dislocation generation and motion to differ. They will also underpin parallel studies on strained structures which exploit the associated piezoelectric fields in optoelectronic devices with novel and improved performance.
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Organisation Website:	http://www.shef.ac.uk