EPSRC Reference: |
GR/J86759/01 |
Title: |
STUDY OF INGAP/GAAS DHBTS FOR HIGH FREQUENCY POWER APPLICATIONS |
Principal Investigator: |
Rezazadeh, Professor AA |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic Engineering |
Organisation: |
Kings College London |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 June 1995 |
Ends: |
31 August 1998 |
Value (£): |
141,236
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
To develop a suitable theoretical model for design of power DHBTs based on InGaP/GaAs.To investigate various self-aligned steps for a fully self-aligned device structure.To fabricate and assess the power and frequency of DHBTs.
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Key Findings |
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Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
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