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Details of Grant 

EPSRC Reference: GR/K58883/01
Title: INGAALP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH POWER AND HIGH FREQUENCY APPLICATIONS
Principal Investigator: Houston, Professor P
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Bookham Technology Plc DSTL - JGS
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1995 Ends: 30 September 1998 Value (£): 154,859
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
HBTs will be studied at elevated temperatures to identify and understand the temperature sensitive mechanisms and assess their suitability for high temperature and high power applications. High temperature ohmic contacts will be developed to enable studies to be carried out at 350 degrees C. A thorough understanding of the mechanisms relating to these effects will be developed and included in a comprehensive analytical model. Such an understanding will be used to design novel structures including wide gap collectors to increase the breakdown voltage and power handling capability and to optimise the base doping and gain by investigating different substrate orientations and assessing predicted electron mobility improvements with increase base doping. Such devices could outperform those currently being studied on GaAs substrates. Likely benefits from this work include high temperature electronics for the automotive and space industries and devices suitable for next generation cellular telephones.
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Further Information:  
Organisation Website: http://www.shef.ac.uk