| EPSRC Reference: |
GR/L02845/01 |
| Title: |
AN STM/STS STUDY OF THE ENHANCEMENT OF 111-V SEMICONDUCTOR LASER POWER |
| Principal Investigator: |
Wilks, Professor S |
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| Department: |
Electrical & Electronic Engineering |
| Organisation: |
Swansea University |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 October 1996 |
Ends: |
30 September 1999 |
Value (£): |
131,289
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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The properties of surfaces and interfaces are of vital importance in the determination of the electrical/optical characteristics of semiconductor devices. Indeed, the maximum power density of semiconductor lasers is determined by the presence of surface states in the bandgap at the laser facet surface that lead to catastrophic optical degradation (COD). We, in collaboration with Nortel and BNR, wish to investigate the use of thin silicon layers to passivate the laser facet to eradicate the surface states and increase the power input of the device. Laser devices will be cleaved in ultra-high vacuum and Si deposited onto the laser facets under various conditions to achieve the optimum passivation conditions; these devices will be tested at Nortel/BNR for improved characteristics. Obviously a technique that circumvents the need for UHV, or complicated chemical treatment, would be highly desirable by industry. The passivation mechanism will be explored in fundamental detail using surface science techniques (XPS, LEED, STM/STS) to obtain the underlying physics and chemistry associated with the removal of the surface status. The results will be compared with TEM measurements performed at BNR Ottawa/Nortel Paignton on the same samples to correlate the breakdown/enhancement of the laser devices with region of high/low surface state density on an atomic scale. The ultimate aim being the introduction of a simple silicon passivation stage into the production of commercially available lasers.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.swan.ac.uk |