EPSRC Reference: |
GR/L42032/01 |
Title: |
A LOW TEMPERATURE SCANNING NON-INVASIVE VOLTAGE PROBE |
Principal Investigator: |
Smith, Professor CG |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 October 1997 |
Ends: |
30 September 2000 |
Value (£): |
94,969
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The goal of this programme is to finish the final construction of a novel low temperature scanning non-invasive voltage probe, and to use it to measure the quantum transport effects occurring in sub-micron semiconductor devices. The instrument has a spatial resolution of 0.3um and a voltage resolution of 50uv at cryogenic temperatures. This programme is primarily designed to provide support and training for a project studentship in the area of scanning probe instrumentation and sub-micron semiconductor quantum device transport. The project has strong support from the scanning probe division of Oxford Instruments Ltd. Our understanding of quantum electron transport in low dimensional devices is limited by the invasive voltage probes used for measurement. This novel scanning probe will allow the voltage drop along a one dimensional ballistic conductor to be mapped out, revealing the predicted absence of dissipation in the channel. We will also be able to measure the voltage distribution near the edge of a Hall bar in the quantum Hall regime. The current is carried by edge states, the nature of which is poorly understood. This instrument will allow us to image their physical extent for the first time.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |