| EPSRC Reference: |
GR/L63648/01 |
| Title: |
CRITICAL AREA EXTRACTION FOR LEADING IC TECHNOLOGY |
| Principal Investigator: |
Walton, Professor AJ |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Sch of Engineering |
| Organisation: |
University of Edinburgh |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
15 June 1998 |
Ends: |
14 June 2001 |
Value (£): |
213,399
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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Summary on Grant Application Form |
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The aim of the proposed project is to research more accurate methods to calculate the critical area of ICs that can take full advantage of statistical sampling. The results of the CA calculations will be combined with defect distribution data to develop better models to predict yield. This will be achieved by developing algorithms for efficiently dealing with 'curved' features using aerial images to produce more realistic geometries for CA calculations of advanced technologies and developing algorithms for critical volumes. Work will also be undertaken to quantify the 3D nature of particulate defects so this information can be used together with critical volumes to predict the yield of ICs.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ed.ac.uk |