| EPSRC Reference: |
GR/L94819/01 |
| Title: |
GROWTH AND ASSESSMENT OF GAN SUBSTRATES FOR LASER DIODES AND FETS |
| Principal Investigator: |
Hughes, Dr O |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Sch of Physics & Astronomy |
| Organisation: |
University of Nottingham |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 January 1998 |
Ends: |
31 December 1999 |
Value (£): |
202,716
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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The growth of group III nitride has great potential for visible LEDs and LASERs and also for high voltage FETs. Up to now GaN has been grown heteroepitaxially on sapphire, SiC or GaAs. We plan to grow very thick (50 to 500 micron) layers of GaN and alloys such as (AlGaIn) N as strained layers on GaAs substrates and then to remove the GaN films as free-standing substrates for the subsequent homoepitaxial growth of high quality unstrained nitride films. The technique to be used is the subject of two process patent applications and so cannot be discussed in any detail in this proposal because of our obligation to maintain commercial confidentiality.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.nottingham.ac.uk |