| EPSRC Reference: |
GR/M04365/01 |
| Title: |
PHONON SCATTERING AND HOT CARRIER ENERGY RELAXATION IN GALLIUM NITRIDE BASED ELECTRONIC DEVICES |
| Principal Investigator: |
Kent, Professor A |
| Other Investigators: |
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| Department: |
Sch of Physics & Astronomy |
| Organisation: |
University of Nottingham |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 September 1998 |
Ends: |
30 November 2001 |
Value (£): |
208,517
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| EPSRC Research Topic Classifications: |
| Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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We plan to study phonon scattering and hot carrier energy relaxation in Gallium Nitride (GaN) based electronic devices. These processes are of central importance to the operation of all electronic and optoelectronic devices based on GaN, such as laser diodes, hgih temperature field effect transistors (FETs), high power and high frequency FETs. Bulk epilayers, heterojunctions and quantum well devices, all grown by MBE, will be investigated. Measurements of the hot electronic energy loss rates I the electronic temperature range 1-500K will be made using pulsed electronic transport measurements. The phonos emitted by the hot carriers will be observed directly using superconducting detectors. Heat pulse measurements of phonon absorption and scattering will also be made. These measurements will enable us to identify the important energy loss mechanisms throughout the above carrier temperature range and also the carrier-phonon coupling constants.We also intend to use the techniques of nonequilibrium phonon spectroscopy developed at Nottingham over the years to probe the low-dimensional carrier states in GaN heterojunction and quantum well devices. To be specific, we can measure the carrier confinement in the heterojunction growth direction.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.nottingham.ac.uk |