| EPSRC Reference: |
GR/M33280/01 |
| Title: |
MICRO-CAVITY TECHNIQUES FOR GETTERING TRACE IMPURITIES IN ADVANCED SEMICONDUCTOR DEVICES |
| Principal Investigator: |
Haworth, Dr L |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Sch of Engineering |
| Organisation: |
University of Edinburgh |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 1999 |
Ends: |
30 September 2002 |
Value (£): |
178,716
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Processing |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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The dissolution strength for impurities gettered by cavities appears to be greater than for alternative gettering techniques. In this project we will investigate the nature and formation of cavities introduced by implanting inert species and, in particular, will investigate the effect of cavity size, morphology and surface composition on dissolution strength with a view to optimising the gettering of metallic impurities. The cavities will be generated at various depths under MOS devices. Standard MOS transistors with a gate length of 1.5um and experimental devices with a gate length of 0.35um will be fabricated on wafers with and without gettering so that the characteristics may be compared. We will specify the optimum gettering process and the corresponding improvement in device operation.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ed.ac.uk |