EPSRC Reference: |
GR/M49922/01 |
Title: |
A LOW TEMPERATURE HIGH FREQUENCY SCANNING NON-INVASIVE VOLTAGE PROBE |
Principal Investigator: |
Smith, Professor CG |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
31 March 2000 |
Ends: |
30 March 2004 |
Value (£): |
557,170
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EPSRC Research Topic Classifications: |
Condensed Matter Physics |
Instrumentation Eng. & Dev. |
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EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
We propose to put together a low temperature scanning non-invasive voltage probe which can work at over 100 MHz. We will use this to investigate quantum transport phenomena in low dimensional semiconductor devices. The probe will be one of the first low temperature scanning probes with a stage to operate at dilution refrigerator temperatures. It will work four orders of magnitude faster than any existing scanning voltage probe. The energy resolution divided by the time resolution will be close to the theoretical maximum of h/. The instrument will use a chip inductor to measure local voltage changes. The SET will be defined at the corner of a chip which will be inverted and scanned over the devices to be investigated. We will look for time resolved measurement of single electrons movement between two coupled quantum dots. We will measure the frequency response of electron transport in sub-micron semiconductor devices to look for electron ordering. We will also look for edge states in the quantum Hall regime where the high frequency testing of screening properties should reveal the spatial extent of the edge states.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |