EPSRC Reference: |
GR/M90832/01 |
Title: |
LOW TEMPERATURE, STABLE AMORPHOUS SILICON FOR THIN FILM TRANSISTORS ON PLASTIC |
Principal Investigator: |
Robertson, Professor J |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Engineering |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 January 2000 |
Ends: |
30 June 2003 |
Value (£): |
176,616
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Active matrix liquid crystal displays (AMLCDs) using amorphous silicon thin film transistors (TFT) are the dominant flat panel display technology. There is a strong desire to lower the process temperature from the present 250-300C to below 150C to allow the use of plastic substrates. At present, hydrogenated amorphous silicon (a-Si:H) deposited at low temperature has either a low mobility or poor stability. It has recently been found that excess hydrogen in low temperature a-Si:H causes the wide band tails and thus the reduced field effect mobility, and that their instability arises from compressive stress. A plasma source with a high flux of low energy ions, such as an electron cyclotron resonance (ECR) reasctor, could dehydrogeneation the a-Si:H without introducing compressive stress. This project will use our ECR system to optimise the growth conditions for low temperature a-Si:H, and the results transferred to industrial collaborators such as Phillips. The results will be used to further our understanding of growth processes of a-Si:H.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |