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EPSRC Reference: GR/N20997/01
Title: STUDIES OF FUNDAMENTAL PHYSICAL PROCESSES IN INAS-(AL) GAAS SELF-ASSEMBLED QUANTUM DOTS
Principal Investigator: Mowbray, Professor D
Other Investigators:
Fox, Professor AM Cullis, Professor AG Hill, Dr G
Skolnick, Professor M Cockburn, Professor J
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2001 Ends: 31 December 2003 Value (£): 243,245
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
We propose a detailed study of fundamental physical processes in self-assembled InAs-(A1)GaAs quantum dots (QDs). Using recently developed equipment and samples we will perform a comprehensive optical spectroscopic study of single QDs, thereby eliminating inhomogeneous broadening effects. The aim will be to obtain a full understanding of the single particle energy level structure, carrier capture and relaxation mechanisms and many carrier effects (exchange and correlation effects, band gap renormalisation, shake-up processes) using the techniques of PL, PLE, PC and magneto-optics. Ultra-high resolution spectroscopy of single QDs will be performed using a Fabry-Perot etalon. Natural line widths will be determined, permitting a study of carrier scattering, dephasing and relaxation mechanisms. Electronic coupling between vertically stacked QDs will be investigated. Conventional spectroscopy on large QD ensembles will be used to determine the energy level structure and carrier escape mechanisms in InAs-AlGaAs QDs as a function of the size of the confinement potential. In addition, conventional spectroscopy will also be used to determine the nature of wavefunction anisotrophies and valence band mixing, and as a probe of QD structural properties.
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Organisation Website: http://www.shef.ac.uk