| EPSRC Reference: |
GR/N32983/01 |
| Title: |
FUTURE TECHNOLOGIES FOR THE ELECTRICAL ISOLATION OF III-V SEMICONDUCTOR DEVICES |
| Principal Investigator: |
Rezazadeh, Professor AA |
| Other Investigators: |
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| Department: |
Electronic Engineering |
| Organisation: |
Kings College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
25 September 2000 |
Ends: |
30 June 2002 |
Value (£): |
91,624
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Processing |
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| EPSRC Industrial Sector Classifications: |
| Electronics |
No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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A systematic approach to III-V semiconductor electrical isolation via ion implantation is required by the Surrey Ion Beam Centre. We therefore propose a dedicated project investigating the physics and applications of implant isolation. Defect/dopant interaction will be studied through the correlation of point defect concentration and the electrical properties of implanted material. New methods for the efficient isolation of In-based and narrow band-gap materials will be developed on simple test structures. These methods will be applied and tested on real devices for which the need for a planar isolation process has been highlighted, and for which no process currently exists. The results will be summarised in a predictive PC program developed to provide recipes for isolation of devices varying in composition, doping type/concentration and depth.
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Key Findings |
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
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| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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