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EPSRC Reference: GR/R01590/01
Title: Theory of Defects In Amorphous Si02 For Opto- and Microelectronic Applications
Principal Investigator: Shluger, Professor A
Other Investigators:
Stoneham, Professor AM
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: UCL
Scheme: Standard Research (Pre-FEC)
Starts: 15 December 2000 Ends: 14 June 2004 Value (£): 169,547
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Communications
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Summary on Grant Application Form
We aim to develop models of photo-induced processes responsible for refractive index changes in GeO2-SiO2 glasses. These should point to ways to control and optimise these processes in photonic and opto-electronic devices. The models, with experiment, will help to address the issues of the origins of electron and hole traps and the mechanisms of densification of the local glass structure under UV excitation. Our theory will treat explicitly defect processes in the amorphous structure, will calculate defect electron and hole affinities, and will include long-range polarisation effects and strong electric fields in the ab initio calculations of their charge stability and spectrocopic properties. We will first study E centres, and electrons and holes, either self-trapped or trapped by Ge impurities in -quartz and amorphous silica (a-SiO2). Next we shall consider the family of Ge centres in a-SiO2, their association with hydrogen, charge stability, and photo-induced transformations. This should let us elucidate the mechanisms in the colour centre model of Bragg grating formation in GeO2-SiO2 glasses. Finally, we will study photo-induced reorganisation of amorphous network involving Ge centre in GeO2-SiO2 glasses due to two-photon UV irradiation, and develop the densification mechanism of these materials.
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