EPSRC Reference: |
GR/R10387/01 |
Title: |
Hole Trap Generation and It's Role In Oxide Breakdown |
Principal Investigator: |
Zhang, Professor JF |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Engineering Tech and Maritime Operations |
Organisation: |
Liverpool John Moores University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 June 2001 |
Ends: |
31 May 2004 |
Value (£): |
165,961
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
VLSI Design |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The recent work of IBM researchers shows that the maximum operation voltage for future generation of CMOS technology will not be able to follow the roadmap defined by the Semiconductor Industry Association (SIA), because of the gate oxide breakdown, recently. The most successful model is developed by IMEC and IBM and is based on electron trap generation in the oxide. However, difficulties have been encountered when this model is applied to the latest results. In this model, the contribution of hole trap generation to the breakdown has not been considered, since there is little information available on hole trap creation. The recent preliminary results of the applicant show that a large amount of hole traps can be created. The objective of this programme is to carry out a systematic and focused investigation in hole trap generation and its role in oxide breakdown. The issues to be addressed include the hole trapping kinetics, effects of temperature, hydrogen and nitration on hole trap generation, and the contribution of hole trap generation to breakdown. The prime researchers at both IMEC and IBM consider the proposed research to be important and timely.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.livjm.ac.uk |