Details of Grant 

EPSRC Reference:	GR/R10820/01
Title:	Aggregation of Interstitials In Ion Implanted Crystalline Silicon
Principal Investigator:	Davies, Professor G
Other Investigators:
Researcher Co-Investigators:
Project Partners:	Australian National University (ANU) Kungl.tekniska Hogskolan University of Sussex
Department:	Physics
Organisation:	Kings College London
Scheme:	Standard Research (Pre-FEC)
Starts:	01 December 2000	Ends:	31 May 2004	Value (£):	43,515
EPSRC Research Topic Classifications:	Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:	Electronics
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Summary on Grant Application Form
On average an integrated circuit fabricated on a silicon wafer undergoes 15 separate implants with ions. These implants, whether they are intended to introduce a shallow doping layer or a deep implant to remove impurities, require increasing control, as the dimensions shrink on successive generations of devices. Implants of silicon ions generate vacant lattice sites and interstitial atoms through radiation damage, and also necessarily create a supersaturation of self-interstitials. It is crucial to understand the behaviour of these defects as they interact with each other and with impurities in the silicon, especially since processing is also having to be made at lower temperatures where more species of defects survive. This proposal is to extend and strengthen a recently developed collaborative study involving photoluminescence, deep level transient spectroscopy and transmission electron microscopy studies of specially implanted silicon. The new collaboration will introduce two theory groups, one working on the detailed properties of individual defects and one concentrating on the aggregate kinetics, to assist in the interpretation of the new experimental data and to guide experiments. A key factor in the collaboration will be the mobility of PhD students and RA's between the groups, to gain relevant first-hand experience.
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