EPSRC Reference: |
GR/R12336/01 |
Title: |
Integrated Planar Doped Barrier Technology For Ultra Broadband Wide Dynamic Range Millimetre-Wave /Microwave Detectors/Sensors |
Principal Investigator: |
Hu, Dr Z |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic Engineering |
Organisation: |
Kings College London |
Scheme: |
Fast Stream |
Starts: |
01 April 2001 |
Ends: |
31 March 2003 |
Value (£): |
62,891
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EPSRC Research Topic Classifications: |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
Communications |
Electronics |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Millimetre-wave/microwave power detectors/sensors are widely used in fields such as communication and radar systems, test and measurement instrumentations. With the emergence of third generation mobile communication systems, the mobile system spectrum has been considerably widened with mobile phone set working on a few hundred MHz at low end to mobile broadband system (MBS) on 66 GHz at the top of the spectrum. This raises the demand of ultra broad band (0.01 to 70 GHz) and wide dynamic range (-75 dBm to 23 dBm) millimetre-wave/microwave detectors/sensors. Although it is possible to cover such wide frequency spectrum by different range of detectors/sensors, such approaches are both costly and inefficient. The aim of this fast stream programme is to design, fabricate, characterise and evaluate ultra broadband and wide dynamic range integrated CPW millimetre-wave/microwave detectors/sensors using GaAs planar doped barrier technology so to advance UK millimetre-wave/microwave detector/sensor technology and contribute to our competitiveness in these fields.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
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