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EPSRC Reference: GR/R25361/01
Title: Modelling Hydrogen In Wide-Gap Semiconductors With it Pseudo-Isotope, Muonium
Principal Investigator: Cox, Professor S
Other Investigators:
Davis, Professor E Irvine, Professor SJC
Researcher Co-Investigators:
Professor N Ayres De Campos Professor R Lichti
Project Partners:
Texas Tech University University of Coimbra
Department: ISIS Pulsed Neutron & Muon Source
Organisation: STFC Laboratories (Grouped)
Scheme: Standard Research (Pre-FEC)
Starts: 16 May 2001 Ends: 15 November 2002 Value (£): 15,598
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Following our discovery of a shallow-donor state of muonium in CdS, we wish to characterise this state fully, to examine the extent of its generality and systematics amongst the II-VI compounds and to pursue the implications for hydrogen impurity (for which only deep states ar so far known). Following a fruitful preliminary exploration, in which muonium analogues of the hydride ion have been identified in GaN film and signatures of state mimicking the interstitial proton and hydrogen atom seen in polycrystalline AIN, we wish to make a full survey of all three charge states in wellcharacterized, oriented samples of the Group-III nitrides.We expect to determine sites and to map electronic structures, obtaining local hyperfine and quadrupole interactions via muon spin rotation and resonance, also to identify transitions between the various states and to measure their individual mobilities via muon spin relaxation. With due regard to isotope effects, we shall examine the transfer of this information to modelling the behaviour of hydrogen impurity in these wide band--gap materials, which are currently being developed for photovoltaic and optoelectronic applications. The work should provide a substantial body of data and new insights into the physics of defects in electronic materials.
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