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EPSRC Reference: GR/R39283/01
Title: Impurities in CdTe: their Role in Optoelectronic Devices
Principal Investigator: Halliday, Professor DP
Other Investigators:
Durose, Professor K
Researcher Co-Investigators:
Project Partners:
Swiss Federal Institute of TEC Union Miniere
Department: Physics
Organisation: Durham, University of
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2002 Ends: 30 September 2005 Value (£): 264,261
EPSRC Research Topic Classifications:
Materials Characterisation Optoelect. Devices & Circuits
Solar Technology
EPSRC Industrial Sector Classifications:
Electronics Energy
R&D
Related Grants:
Panel History:  
Summary on Grant Application Form
The effect of impurities in CdTe as used in state of the art photovoltaic devices is not known. The range of impurities present and their effect on devices has not been investigated. Even fundamental issues such as the doping mechanism of the CdTe is not known with any certainty. Impurities are one of the key unresolved areas in this device technology. Low cost photovoltaic devices based on thin film CdTe are polycrystalline and the interaction between grain boundaries and impurities is not know. It is believed that impurities play a key role in the passivation of grain boundaries in polycrystalline CdTe.We will undertake a comprehensive study of the role of impurities in CdTe based optoelectronic devices using a sound and well proven methodology. Ultra pure reference devices will be grown and compared with state of the art devices. We will address the following issues: 1) what impurities are present in devices made from CdTe, 2) what concentrations do these have and where are they located in the device structure, 3) what is the origin of the impurities, 4) how are impurities involved in grain boundary passivation and 5) what are the beneficial and deleterious impurity species for CdTe based optoelectronic devices.
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