| EPSRC Reference: |
GR/R42450/01 |
| Title: |
HACT devices using nitride matrials |
| Principal Investigator: |
David, Professor J |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
University of Sheffield |
| Scheme: |
ROPA |
| Starts: |
01 September 2002 |
Ends: |
30 June 2003 |
Value (£): |
37,955
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| EPSRC Research Topic Classifications: |
| Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
| Communications |
Electronics |
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| Related Grants: |
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| Panel History: |
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Summary on Grant Application Form |
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It is proposed to undertake a pilot study to investigate simple heterostructure acoustic charge transfer (HACT) devices fabricated in the group III nitride material system, to prove the feasibility of transferring the current technology from GaAs/GaAlAs to nitride. Such devices would be novel and could revolutionise the impact of HACTs on analogue signal-processing and optoelectronic sensing systems. Some initial trials will be conducted to fabricate some simple SAW bandpass filters in order to gain experience with fabricating such devices. The wafer structures proposed are based upon existing designs for HEMTs. Sapphire substrates will be used for lattice matching nurooses.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.shef.ac.uk |