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Details of Grant 

EPSRC Reference: GR/R69501/01
Title: Disclocation related luminescence in silicon
Principal Investigator: Kenyon, Professor AJ
Other Investigators:
Pitt, Professor CW
Researcher Co-Investigators:
Project Partners:
Russian Academy of Sciences
Department: Electronic and Electrical Engineering
Organisation: UCL
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2001 Ends: 30 June 2002 Value (£): 25,633
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This is a pump-priming feasibility study that will further our understanding of the mechanisms responsible for dislocation-related luminescence (DRL) in silicon, and thereby to identify practical approaches for increasing the quantum efficiency of room-temperature DRL. It builds on recent collaborations between UCL and the Russian Academy of Sciences initiated during Dr Steinman's Royal Society funded visit to UCL in September 2000. Dr Steinman has been awarded a travel grant from RAS to visit UCL for a period of one month; the current proposal seeks to maximise the benefit to both UCL and RAS from this visit.We propose to ascertain which dislocation configurations are responsible for the observed luminescence bands in silicon. Photoluminescence from dislocation loops around implanted impurity precipitates, and from those formed in relaxed SiGe/Si heterostructures will be studied and compared. Current understanding of the nature of radiative recombination at dislocations is poor; hence we will study quantitatively the effect of different impurities on the quantum efficiency and temperature quenching of dislocation photoluminescence. Both shallow (fluorine, oxygen), and deep impurities (transition metals and rare earths) will be investigated. Being a feasibility study, the project will principally identify strategies for further collaborative work.
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