| EPSRC Reference: |
GR/S76632/01 |
| Title: |
MOCVD of Lanthanide Oxides and Silicates for Microelectronics Applications |
| Principal Investigator: |
Jones, Professor A.C. |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Chemistry |
| Organisation: |
University of Liverpool |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
04 May 2004 |
Ends: |
03 October 2007 |
Value (£): |
255,912
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
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Summary on Grant Application Form |
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This is a multidisciplinary project with the ultimate objective of developing novel precursor materials and process technologies for the manufacture of next generation gate dielectric thin films. The principal aims of the project are therefore to develop a range of volatile rare-earth silylamide and alkoxide precursors for the liquid injection CVD of lanthanide metal oxides and silicates, and to assess the physico-chemical and electronic properties of the resulting high k dielectric films for MOS applications.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.liv.ac.uk |