| EPSRC Reference: |
GR/J73711/01 |
| Title: |
CAUSES AND ELIMINATION OF 3-D GROWTH MODES IN III-V COMPOUND MULTIPLE QUANTUM WELL STRUCTURES |
| Principal Investigator: |
Bangert, Professor U |
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| Department: |
Physics |
| Organisation: |
UMIST |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
11 May 1994 |
Ends: |
10 May 1995 |
Value (£): |
10,150
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Summary on Grant Application Form |
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A radiotracer approach using [82Br], [131I] and [36C1], cobined with analyses of solution species by atomic absorption spectroscopy and cyclic voltammetry, will be used to study etching of semiconductor wafers. A comparative exercise involving GaAs, GaSb, InP, InAs [all (100)], InAs and InSb [both (111)], polycrystalline CdTe and Si [(100) and (111)], with the reagents Br2 or I2 in non-aqueous media, aqueous H2O2 and aqueous NaOCl, will be followed by more detailed examinations of selected systems to obtain mechanistic information. Modified bromine and iodine etchants, prepared by prior oxidation of X2 (X = Br, I) and stabilisation of the resulting X+ cation with macrocyclic molecules of various geometries, will be used to determine the effects on the surface reactions of steric constraints and reagent redox couple variation. The effects on etching rate and selectivity of complexation reactions between the species on the oxidised surface and other species will be determined by addition of potential ligands. Macrocycle molecules will be used, particularly to scavenge more electro positive species and F- ion, with [18F] as a probe, will be used as a competitor for OH- and H2O.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
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| Description |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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