| EPSRC Reference: |
GR/L11984/01 |
| Title: |
OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B' |
| Principal Investigator: |
Rees, Professor GJ |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
University of Sheffield |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
20 January 1997 |
Ends: |
19 January 2000 |
Value (£): |
251,557
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| EPSRC Research Topic Classifications: |
| Optoelect. Devices & Circuits |
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Summary on Grant Application Form |
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We propose a combined programme of research onto novel (opto-)electronic devices and supporting physics. Three novel devices are proposed which exploit piezoelectric effects All-Optical S-SEED, Integrated Laser/Waveguide Modulator and Piezoelectric HEMT. The first two optical devices will be investigated in the InGaAs/AlGaAs/GaAs(111)B system in which we have most experience. This device work will be supported by a study of the effect of charge build up and decay in the InGaAs/GaAs(111)B system. We shall also investigate the long wavelength, strained, piezoelectric InGaAs/InAlAs system grown on InP(111)B, compatible with long haul optical fibre communications. The HEMT device will be investigated in this latter system. The experimental physics and device work will be supported by theoretical studies and device modelling.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.shef.ac.uk |